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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFN 36N100 VDSS ID25 RDS(on) = 1000V = 36A = 0.24 D G S S Maximum Ratings 1000 1000 20 30 36 144 36 64 4 5 700 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A mJ J V/ns W C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features * International standard packages * miniBLOC, with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 5.0 200 TJ = 25C TJ = 125C 100 2 0.24 V V nA A mA * * * * Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA V DS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Advantages * Easy to mount * * Space savings High power density (c) 2001 IXYS All rights reserved 98520C (02/01) IXFN 36N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 18 40 9200 S pF pF pF ns ns ns ns nC nC nC 0.18 0.05 K/W K/W miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = 0.5 * ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 300 41 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 55 110 30 380 M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 65 185 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 36 144 1.3 180 330 2 8 A A V ns ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 VTJ = 25C TJ =125C TJ = 25C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFN 36N100 80 TJ = 25OC VGS =10V 9V 8V 7V 50 40 TJ = 125OC VGS =10V 9V 8V 7V 6V 6V 60 ID - Amperes ID - Amperes 30 20 10 5V 40 6V 20 5V 0 0 0 4 8 12 16 20 0 5 10 15 20 25 VDS - Volts VDS - Volts Figure 1. Output Characteristics at 25OC 2.2 VGS = 10V Figure 2. Output Characteristics at 125OC VGS = 10V 2.0 2.2 TJ = 125OC RDS(ON) - Normalized 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 RDS(ON) - Normalized 1.9 ID = 36A 1.6 ID =18A TJ = 25 C O 1.3 30 40 50 1.0 25 50 75 100 125 150 ID - Amperes T J - Degrees C Figure 3. 40 32 RDS(on) normalized to 0.5 ID25 value vs. ID 50 40 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ ID - Amperes 24 16 8 0 ID - Amperes 30 TJ = 125oC 20 10 0 3.5 TJ = 25oC -50 -25 0 25 50 75 100 125 150 4.0 4.5 5.0 5.5 6.0 6.5 7.0 T C - Degrees C VGS - Volts Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves (c) 2001 IXYS All rights reserved IXFN 36N100 12 10 VDS = 500 V ID = 18 A IG = 10 mA 30000 10000 Ciss VGS - Volts 8 6 4 2 0 0 Capacitance - pF f = 100kHz Coss 1000 Crss 100 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 7. Gate Charge 100 Figure 8. Capacitance Curves 80 ID - Amperes 60 40 TJ = 125OC TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 1.000 R(th)JC - K/W 0.100 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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